以SiCl4和H2为源气体、采用等离子体增强化学气相沉积(PECVD)技术在不同放电功率下沉积微晶硅薄膜, 通过调节放电功率实现了微晶硅薄膜的晶化调控和光电性质的优化, 并利用Langmuir探针和质谱计分别对等离子体空间的电子特性和中性基团进行在线检测, 初步探讨了成膜的微观机理.
Microcrystalline silicon films were deposited, using H2 diluted SiCl4 gaseous mixture, by plasma enhanced chemical vapor deposition (PECVD) technology under different discharge powers. The crystallization control and optimization of photoelectric properties of microcrystalline silicon thin films were realized by adjusting the discharge power. Morever, the electronic properties and the neutral radicals of the plasma space were detected online by the Langmuir probe and the mass spectrometer, respectively. The microscopic mechanism of film formation was also discussed preliminarily.
引用本文格式： 祝祖送,尹训昌,张杰,易明芳,闻军. 放电功率对微晶硅薄膜的晶化调控及光电性质的影响[J]. 四川大学学报: 自然科学版, 2019, 56: 318.复制