环栅肖特基势垒MOSFET解析电流模型
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TN432.1

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An Analytical Drain Current Model for Surrounding-Gate Schottky Barrier MOSFET
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    摘要:

    肖特基势垒金属氧化物半导体场效应晶体管(Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET)的电流一般需要通过载流子的费米狄拉克分布对能量积分来计算或自洽迭代数值计算,为降低其复杂性,本文采用若干拟合参数,考虑镜像力势垒降低效应、偶极子势垒降低效应和小尺寸下量子化效应对肖特基势垒高度的影响,给出了环栅肖特基势垒MOSFET一种新的解析电流模型。所提出的电流模型与文献报道实验数据符合较好,验证了模型的正确性,对环栅肖特基势垒MOSFET器件以及电路设计提供了一定的参考价值.

    Abstract:

    The current of Schottky barrier metal-oxide-semiconductor field-effect transistor (MOSFET) is popularly calculated through the integration of Fermi-Dirac distribution for carrier over energy or self consistent iterative numerical calculation. In order to reduce the calculation complexity, this paper presents a new analytical drain current model for surrounding-gate Schottky barrier MOSFET through adopting several fitting parameters which takes into account for the impact on the Schottky barrier height of image force barrier lowering effect, dipole barrier lowering effect and quantum effect at smaller size. The proposed drain current model is in good agreement with the reported experimental data in the literature, which verifies the correctness of the model and can provide some reference for the design of surrounding-gate Schottky barrier MOSFET device and circuit.

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引用本文格式: 许立军,张鹤鸣,杨晋勇. 环栅肖特基势垒MOSFET解析电流模型[J]. 四川大学学报: 自然科学版, 2017, 54: 553.

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历史
  • 收稿日期:2015-09-03
  • 最后修改日期:2015-10-01
  • 录用日期:2015-10-18
  • 在线发布日期: 2017-05-02
  • 出版日期: